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Typical Characteristics T J = 25°C unless otherwise noted
5
2000
4
I D = -4.5A
V DD = -5V
1000
C iss
3
2
V DD = -10V
V DD = -15V
C oss
1
100
f = 1MHz
V GS = 0V
C rss
0
0
2
4 6 8
10
12
70
0.1
1 10
20
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
1
100
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
0.1
0.01
V GS = 0V
T J = 150 o C
10
r DS(on) LIMIT
10us
100us
1ms
1E-3
1
10ms
100ms
1E-4
T J = 25 o C
0.1
SINGLE PULSE
1s
1E-5
0
5 10 15
20
0.01
0.1
1
TJ = MAX RATED
TA = 25 O C
10
DC
50
-V GS , GATE TO SOURCE VOLTAGE(V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
R θ JA = 156 C/W
T A =25 C
P DM
50
40
30
SINGLE PULSE
o
o
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
20
10
SINGLE PULSE
0.01
SINGLE PULSE
NOTES:
t 1
t 2
DUTY FACTOR: D = t 1 /t 2
10
10
10
10
10
10
10
10
10
10
10
10
10
0
-3
-2
-1
0
1
2
0.001
-4
-3
PEAK T J = P DM x Z θ JA x R θ JA + T A
-2 -1 0 1
2
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Di ssipation
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
FDC638APZ Rev.B
4
www.fairchildsemi.com
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